sigc42t120cl edited by infineon technologi es ai ps dd hv3, l 7151 - p , edition 2 , 03.09.2003 igbt chip in npt - technology this chip is used for: power module bsm25gd120dlc e3224 features: 1200v npt technology 180m chip low turn - off losses short tail current positive temperature coefficient easy paralleling applications: drives g c e chip typ e v ce i cn die size package ordering code sigc42t120cl 1200v 25a 6.59 x 6.49 mm 2 sawn on foil c67078 - a4675 - a001 sigc42t120cl 1200v 25a 6.59 x 6.49 mm 2 unsawn c67078 - a4675 - a002 mechanical parameter: raster size 6.59 x 6.49 emitter pad size 2 x ( 2.18 x 1.58 ) gate pad size 1.06 x 0.65 area total / active 42.8 / 33.5 mm 2 thickness 180 m wafer size 150 mm flat position 90 grd max.possible chips per wafer 334 pcs passivation frontside photoimide emitter metallization 3200 nm al si 1% coll ector metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original con tainer, in dry nitrogen, < 6 month at an ambient temperature of 23c
sigc42t120cl edited by infineon technologi es ai ps dd hv3, l 7151 - p , edition 2 , 03.09.2003 maximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 75 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip) , t j =25 c, unless otherwise specified: value parameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c = 1.5ma 1200 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =25a 1.8 2.2 2.6 gate - emit ter threshold voltage v ge(th) i c =1ma , v ge =v ce 4.5 5.5 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 3.2 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 120 na electrical characteristics (tested at component): value parameter sym bol conditions min. typ. max. unit input capacitance c iss - 1.65 - output capacitance c oss - - - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 0.11 - nf switching characteristics (tested at component), inductive load value par ameter symbol conditions 1) min. typ. max. unit turn - on delay time t d(on) - 70 - rise time t r - 50 - turn - off delay time t d(off) - 320 - fall time t f t j =125 c v cc =600v, i c =25a, v ge = 15v, r g = 33 w - 60 - ns 1) values also influenced by parasitic l - and c - in measurement and package.
sigc42t120cl edited by infineon technologi es ai ps dd hv3, l 7151 - p , edition 2 , 03.09.2003 chip drawing:
sigc42t120cl edited by infineon technologi es ai ps dd hv3, l 7151 - p , edition 2 , 03.09.2003 further electrical characteristics: this chip data sheet refers to the device data sheet bsm25gd120dlc e3224 package econo 2 short pin description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery ter ms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failur e of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, o r to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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